Device protecting layer
US5483097A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1994 |
| Grant date | Jan 9, 1996 |
| Priority date | — |
| Expiry date | Jan 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device protecting film having a UV transmissible SiN film, wherein the film is formed by a plasma CVD process in such a manner that a composition ratio Si/N falls within the range of 0.75 to 0.87, a Si--H bond concentration Z (cm.sup.-3) in the SiN film has a value near the value Z expressed by the following formula in accordance with a value X of Si/N: EQU Z=1.58.times.10.sup.22 X-9.94.times.10.sup.21 and, at the same time, a hydrogen bond concentration Y (cm.sup.-3) determining the Si--H bond concentration has a value near the value Y expressed by the following formula in accordance with X: EQU Y=1.01.times.10.sup.22 X+0.54.times.10.sup.22 The resulting SiN film transmits ultraviolet rays having a wavelength of 254 nm, reduces a stress inside the film, and has high moisture resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.