Hetero-epitaxially grown compound semiconductor substrate
US5484664A · kind A · utility
166Cited by
20References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1994 |
| Grant date | Jan 16, 1996 |
| Priority date | — |
| Expiry date | Jan 21, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.