Method for forming a semiconductor sensor
US5484745A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 26, 1993 |
| Grant date | Jan 16, 1996 |
| Priority date | — |
| Expiry date | Oct 26, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for forming at least one corrugation member in a semiconductor material, contains the step of: forming a semiconductor material layer onto a substrate, masking a first surface of the semiconductor material, etching the first surface to form first cavity thereon, removing a mask from the semiconductor material, masking the first surface and second surface of the semiconductor material, etching the second surface to form second cavity thereon, the second cavity being defined into the first cavity, removing the mask from the semiconductor material, depositing a specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material, etching an unmasked portion of the semiconductor material and depositing the same material as the abovementioned specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material and the specified masking material which has been deposited onto the semiconductor to form the corrugation member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.