Insulated gate bipolar transistor
US5485023A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 15, 1994 |
| Grant date | Jan 16, 1996 |
| Priority date | — |
| Expiry date | Aug 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/411
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a collector side portion of an insulated gate bipolar transistor, there are provided, for example, a p-type collector layer diffused into an n-type semiconductor region, an n-type carrier extraction layer diffused into the semiconductor region opposite to an emitter side portion and a field effect transistor portion having an auxiliary gate disposed between the collector layer and the carrier extraction layer. The field effect transistor portion is controlled by the auxiliary gate in such a manner that during its "off" state the collector layer is separated from the carrier extraction layer connected to a collector terminal to cause its potential to float so that the majority carriers flowing in a transverse direction below the collector layer prevent minority carriers from being injected from the collector layer into the semiconductor region, thereby shortening the "off" operation time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.