Piezoresistive silicon pressure sensor implementing long diaphragms with large aspect ratios
US5485753A · kind A · utility
97Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1993 |
| Grant date | Jan 23, 1996 |
| Priority date | — |
| Expiry date | Oct 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A form of pressure sensor diaphragm and method of making that allows for the formation of long rectangular plate structures in semiconducting material, especially Silicon. A plurality or multiplicity of sensors may be constructed on a single chip, thus providing for absolute and relative sensing of pressure on a single device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.