Method of forming closely spaced metal electrodes in a semiconductor device
US5486483A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 27, 1994 |
| Grant date | Jan 23, 1996 |
| Priority date | — |
| Expiry date | Sep 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A method of forming closely spaced metal electrodes contacting different regions of a semiconductor device is disclosed. The method includes first depositing a sacrificial layer over a developing semiconductor structure. Next, a photoresist layer is deposited over the sacrificial layer and then patterned and developed with a re-entrant profile opening. An opening in the dielectric layer is formed to expose a first semiconductor layer through the re-entrant profile using an anisotropic etch. The photoresist opening is enlarged by removing a portion of the photoresist layer. Then, a metal layer is deposited over the entire structure such that the metal contacts the first semiconductor layer and extends over a portion of the sacrificial layer. The photoresist layer, the sacrificial layer and portions of the first semiconductor layer are removed so that a first metal electrode is connected to a semiconductor region. The first electrode has a lateral extension determined by the amount the photoresist opening is enlarged. The vertical clearance between the first electrode and a second semiconductor layer is determined by the thickness of the sacrificial layer. A second metal electrode is…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.