Michael D. Lammert
16Patents
10h-index
13Co-inventors
69Inventor score
Filing activity: Mar 3, 1986 → Nov 12, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6218911A | Planar airbridge RF terminal MEMS switch | Electricity | 44 | Expired |
| US4711017A | Formation of buried diffusion devices | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5994194A | Self-aligned base ohmic metal for an HBT device cross-reference to related applications | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5828138A | Acceleration switch | Electricity | 23 | Expired |
| US5804487A | Method of fabricating high .beta.HBT devices | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5672522A | Method for making selective subcollector heterojunction bipolar transistors | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5486483A | Method of forming closely spaced metal electrodes in a semiconductor device | Electricity | 15 | Expired |
| US5817446A | Method of forming airbridged metallization for integrated circuit fabrication | Electricity | 15 | Expired |
| US6406965B1 | Method of fabricating HBT devices | Electricity | 12 | Expired |
| US6638366B2 | Automated spray cleaning apparatus for semiconductor wafers | Performing Operations; Transporting | 10 | Expired |
| US5990427A | Movable acceleration switch responsive to acceleration parallel to plane of substrate upon which the switch is fabricated and methods | Electricity | 8 | Expired |
| US5686743A | Method of forming airbridged metallization for integrated circuit fabrication | Electricity | 8 | Expired |
| US6072247A | Cantilevered acceleration switch responsive to acceleration parallel to plane of substrate upon which the switch is fabricated and methods | Electricity | 6 | Expired |
| US6475400B2 | Method for controlling the sheet resistance of thin film resistors | Electricity | 4 | Expired |
| US12121990B2 | Laser welding machine and weld state monitoring method | Physics | 0 | Active |
| US5328856A | Method for producing bipolar transistors having polysilicon contacted terminals | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.