Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US5488000A · kind A · utility
327Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1994 |
| Grant date | Jan 30, 1996 |
| Priority date | — |
| Expiry date | Jun 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/154
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystailinity is obtained. TFTs are built, using this crystalline silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.