Satoshi Teramoto
302Patents
59h-index
87Co-inventors
93Inventor score
Filing activity: Apr 15, 1974 → Jul 11, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5821138A | Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding | Emerging Cross-Sectional Technologies | 582 | Expired |
| US5488000A | Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer | Emerging Cross-Sectional Technologies | 327 | Expired |
| US5712191A | Method for producing semiconductor device | Emerging Cross-Sectional Technologies | 286 | Expired |
| US5620910A | Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride | Emerging Cross-Sectional Technologies | 266 | Expired |
| US6376333B1 | Method of manufacturing flexible display with transfer from auxiliary substrate | Emerging Cross-Sectional Technologies | 258 | Expired |
| US5237417A | Apparatus for displaying television receiver operational parameters in a separate area of the screen | Electricity | 216 | Expired |
| US5621224A | Semiconductor device including a silicon film having an irregular surface | Electricity | 204 | Expired |
| US6515334B2 | Hybrid circuit and electronic device using same | Electricity | 183 | Expired |
| US5985740A | Method of manufacturing a semiconductor device including reduction of a catalyst | Electricity | 180 | Expired |
| US6077731A | Semiconductor device and method for fabricating the same | Electricity | 176 | Expired |
| US5686328A | Semiconductor device and process for fabricating the same | Electricity | 172 | Expired |
| US5888858A | Semiconductor device and fabrication method thereof | Electricity | 169 | Expired |
| US5719065A | Method for manufacturing semiconductor device with removable spacers | Electricity | 164 | Expired |
| US5674304A | Method of heat-treating a glass substrate | Emerging Cross-Sectional Technologies | 155 | Expired |
| US5869363A | Method of manufacturing semiconductor device | Electricity | 141 | Expired |
| US5932893A | Semiconductor device having doped polycrystalline layer | Electricity | 138 | Expired |
| US6093934A | Thin film transistor having grain boundaries with segregated oxygen and halogen elements | Electricity | 135 | Expired |
| US6998282B1 | Method of manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 126 | Expired |
| US5915174A | Semiconductor device and method for producing the same | Electricity | 112 | Expired |
| US6048758A | Method for crystallizing an amorphous silicon thin film | Electricity | 109 | Expired |
| US6180439A | Method for fabricating a semiconductor device | Electricity | 108 | Expired |
| US5929961A | Method and system for fabricating liquid crystal cells having winding means | Physics | 108 | Expired |
| US7375782B2 | Method of manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 106 | Expired |
| US5808321A | Semiconductor device with recrystallized active area | Electricity | 104 | Expired |
| US5900980A | Apparatus and method for laser radiation | Electricity | 103 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.