Semiconductor element having bivalent and VI group element and an insulating layer
US5488234A · kind A · utility
2Cited by
4References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 17, 1994 |
| Grant date | Jan 30, 1996 |
| Priority date | — |
| Expiry date | Mar 17, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Ions are implanted to the n-type or p-type semiconductor layers of a semiconductor element, which includes a semiconductor having a multilayer structure on a substrate, a metal electrode on one entire surface of the semiconductor and a metal section partially formed on the metal electrode, in an amount from 10.sup.12 ions/cm.sup.2 to 10.sup.18 ions/cm.sup.2, thus forming an insulating layer in the n-type or p-type semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.