SOI MOSFET with floating gate
US5488243A · kind A · utility
90Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1993 |
| Grant date | Jan 30, 1996 |
| Priority date | — |
| Expiry date | Dec 3, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/674
Abstract
A semiconductor device of an SOIMOSFET comprising a semiconductor substrate, an insulating layer and a thin film single-crystalline semiconductor layer, the insulating layer containing a floating electrically conductive layer buried therein at a portion corresponding to the channel, the floating electrically conductive layer being electrically insulated from the other portions, the semiconductor device further comprising an electrode adjacent to the floating electrically conductive layer for applying a voltage by which an electric charge is injected into and stored in the floating electroconductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.