Multiple layer tungsten deposition process
US5489552A · kind A · utility
64Cited by
20References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1994 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Dec 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Tungsten plugs are formed in a manner which avoids the formation of unwanted tungsten volcanoes by depositing at least three and preferably five to seven layers of tungsten within a contact hole to form a layered plug. In particularly useful embodiments, the layers are deposited at alternating fast and slow rates of deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.