Inventor · Orlando, FL, US

Pradip K. Roy

139Patents
31h-index
87Co-inventors
93Inventor score

Filing activity: Dec 1, 1977 → Feb 12, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US4851370A Fabricating a semiconductor device with low defect density oxide Electricity 270 Expired
US6025280A Use of SiD.sub.4 for deposition of ultra thin and controllable oxides Electricity 152 Expired
US5940736A Method for forming a high quality ultrathin gate oxide layer Electricity 144 Expired
US6246095A System and method for forming a uniform thin gate oxide layer Electricity 132 Expired
US6011404A System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor Electricity 96 Expired
US6071808A Method of passivating copper interconnects in a semiconductor Electricity 84 Expired
US5573965A Method of fabricating semiconductor devices and integrated circuits using sidewall spacer technology Electricity 80 Expired
US4289794A Process of preparing gasified candy Human Necessities 78 Expired
US6320244A Integrated circuit device having dual damascene capacitor Electricity 78 Expired
US6320238A Gate structure for integrated circuit fabrication Electricity 73 Expired
US5489552A Multiple layer tungsten deposition process Electricity 64 Expired
US6180518A Method for forming vias in a low dielectric constant material Electricity 64 Expired
US6140187A Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate Emerging Cross-Sectional Technologies 62 Expired
US5132244A Growth-modified thermal oxidation for thin oxides Emerging Cross-Sectional Technologies 54 Expired
US7704125B2 Customized polishing pads for CMP and methods of fabrication and use thereof Performing Operations; Transporting 52 Expired
US5147820A Silicide formation on polysilicon Electricity 51 Expired
US6265260A Method for making an integrated circuit capacitor including tantalum pentoxide Electricity 48 Expired
US6100587A Silicon carbide barrier layers for porous low dielectric constant materials Electricity 47 Expired
US4742020A Multilayering process for stress accommodation in deposited polysilicon Electricity 44 Expired
US5298436A Forming a device dielectric on a deposited semiconductor having sub-layers Electricity 43 Expired
US6535014B2 Electrical parameter tester having decoupling means Physics 42 Expired
US5523259A Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer Electricity 42 Expired
US7377840B2 Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs Performing Operations; Transporting 41 Expired
US8715035B2 Customized polishing pads for CMP and methods of fabrication and use thereof Performing Operations; Transporting 40 Active
US5960302A Method of making a dielectric for an integrated circuit Electricity 39 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.