Method for the fabrication of electrostatic microswitches
US5489556A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1994 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Jun 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H59/0009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an electrostatic microswitch has the steps of depositing a silicon nitride layer over a silicon substrate with an opening therethrough to expose the planned sacrificial layer region; oxidation to form a silicon dioxide sacrificial layer; phosphorus ion implantation into the sacrificial layer; forming a phosphorus-doped polysilicon microbeam of the microswitch and its electrode contacts; lateral etching all of the silicon dioxide sacrificial layer in buffered hydrofluoric acid to form an air gap between the microbeam and the substrate; rinsing the structure in DI water, and then in methanol; and drying the structure by a warm nitrogen flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.