Method of producing semiconductor integrated circuit device having interplayer insulating film covering substrate
US5491108A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1993 |
| Grant date | Feb 13, 1996 |
| Priority date | — |
| Expiry date | Dec 10, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method which can markedly improve the flatness of a semiconductor integrated circuit device by forming selectively a layer insulating film on an underlying substrate having level differences is disclosed. First, a Ti--W alloy film is formed on a member which brings about level differences due to wirings or the like, then a PECVD silicon oxide film is formed followed by a plasma treatment using CF.sub.4 gas. Further, a silicon oxide film is deposited by atmospheric pressure CVD using ozone and tetraethoxysilane. Then, the surface is flattened by etchback using an organic SOG film, and a silicon oxide film is formed by plasma excited CVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.