Gate turn-off thyristor
US5491351A · kind A · utility
7Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1994 |
| Grant date | Feb 13, 1996 |
| Priority date | — |
| Expiry date | Oct 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/148
Abstract
A GTO having a cathode emitter (7) is specified, which cathode emitter has a low emission efficiency. This cathode emitter (7) provides a clearly increased resistance to the formation of current filaments. As a result, relatively high turn-off current densities can be reliably mastered. In addition, the fraction of the hole current in the total current is more than 10%. This is achieved, for example, by selecting the penetration depth as <1 .mu.m and the edge concentration as <10.sup.19 cm.sup.-3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.