Low cost, high average power, high brightness solid state laser
US5491707A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1994 |
| Grant date | Feb 13, 1996 |
| Priority date | — |
| Expiry date | Nov 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/08
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high average power, high brightness solid state laser system. We first produce seed laser beam with a short pulse duration and frequency in excess of 1,000 pulses per second. A laser amplifier amplifies the seed pulse beam to produce an amplified pulse laser beam which is focused to produce pulses with brightness levels in excess of 10.sup.11 Watts/cm.sup.2. Preferred embodiments produce an amplified pulse laser beam having an average power in the range of 1 kW, an average pulse frequency of 12,000 pulses per second with pulses having brightness levels in excess of 10.sup.14 Watts/cm.sup.2 at a 20 .mu.m diameter spot which is steered rapidly to simulate a larger spot size. These beams are useful in producing X-ray sources for lithography. In one preferred embodiment, the seed beam is produced in a mode locked Nd:YAG oscillator pumped by a diode array with the frequency of the pulses being reduced by an electro-optic modulator. In a second preferred embodiment, the seed beam is Q switched and includes a Pockels cell for cavity dumping. In a third preferred embodiment, the short duration high frequency pulses for the seed beam is produced by a very short Nd:YAG crystal and a .lambd…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.