Crystal-growth method and semiconductor device production method using the crystal-growth method
US5492080A · kind A · utility
60Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | Dec 21, 1994 |
| Grant date | Feb 20, 1996 |
| Priority date | — |
| Expiry date | Dec 21, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0<Y>1 and 0<Z>1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.