Method of manufacturing a magnetoresistive sensor
US5492720A · kind A · utility
38Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1995 |
| Grant date | Feb 20, 1996 |
| Priority date | — |
| Expiry date | Apr 6, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/399
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a magnetoresistive (MR) read sensor in which the MR layer is transversely biased by a soft magnetic layer separated from the MR layer by a nonmagnetic spacer layer an antiferromagnetic stabilization layer of NiO provides a stabilizing exchange-coupled magnetic field to the transverse bias layer insuring that the transverse bias layer is fully saturated in a preferred direction during sensor operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.