Tsann Lin
124Patents
23h-index
69Co-inventors
93Inventor score
Filing activity: Jul 28, 1992 → Jul 12, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5701223A | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor | Physics | 162 | Expired |
| US6023395A | Magnetic tunnel junction magnetoresistive sensor with in-stack biasing | Physics | 140 | Expired |
| US5528440A | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element | Electricity | 81 | Expired |
| US7488609B1 | Method for forming an MgO barrier layer in a tunneling magnetoresistive (TMR) device | Electricity | 80 | Active |
| US5508866A | Magnetoresistive sensor having exchange-coupled stabilization for transverse bias layer | Physics | 79 | Expired |
| US5315468A | Magnetoresistive sensor having antiferromagnetic layer for exchange bias | Physics | 63 | Expired |
| US5515221A | Magnetically stable shields for MR head | Physics | 60 | Expired |
| US6262869A | Spin valve sensor with encapsulated keeper layer and method of making | Physics | 59 | Expired |
| US6185078A | Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap | Emerging Cross-Sectional Technologies | 58 | Expired |
| US5949623A | Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads | Emerging Cross-Sectional Technologies | 54 | Expired |
| US7239489B2 | Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process | Electricity | 53 | Expired |
| US6127053A | Spin valves with high uniaxial anisotropy reference and keeper layers | Emerging Cross-Sectional Technologies | 48 | Expired |
| US6411476B1 | Trilayer seed layer structure for spin valve sensor | Electricity | 47 | Expired |
| US5436778A | Magnetoresistive sensor having antiferromagnetic exchange bias | Physics | 42 | Expired |
| US5621592A | Magnetic head with magnetically stable shield layers and/or write poles | Physics | 42 | Expired |
| US5492720A | Method of manufacturing a magnetoresistive sensor | Physics | 38 | Expired |
| US6141191A | Spin valves with enhanced GMR and thermal stability | Physics | 35 | Expired |
| US6223420A | Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6030753A | Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6033491A | Fabrication process of Ni-Mn spin valve sensor | Emerging Cross-Sectional Technologies | 31 | Expired |
| US5768071A | Spin valve sensor with improved magnetic stability of the pinned layer | Physics | 30 | Expired |
| US6117569A | Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6074767A | Spin valve magnetoresistive head with two sets of ferromagnetic/antiferromagnetic films having high blocking temperatures and fabrication method | Emerging Cross-Sectional Technologies | 28 | Expired |
| US7469465B2 | Method of providing a low-stress sensor configuration for a lithography-defined read sensor | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6896975B2 | Spin-valve sensor with pinning layers comprising multiple antiferromagnetic films | Emerging Cross-Sectional Technologies | 22 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.