Thin substrate micro-via interconnect
US5493096A · kind A · utility
167Cited by
28References
69Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 10, 1994 |
| Grant date | Feb 20, 1996 |
| Priority date | — |
| Expiry date | May 10, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1383
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for forming conductive via interconnects utilizes the steps of: applying a sacrificial coating to at least one surface of a substrate; laser drilling the substrate through the sacrificial coating to form a via through-hole; applying a conductive coating to the via through-hole; and removing the sacrificial coating(s). Recasting and shattering thus occur in the sacrificial coating rather than in the substrate during the step of laser drilling so as to enhance via through-hole geometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.