Chemical vapor deposition reactor and method
US5493987A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 1994 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | May 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD reactor and method for growing semiconductor material upon a selected surface of a semiconductor wafer supported within the reactor includes a plurality of heat shields that are arranged relative to the peripheral edge and underside of the wafer to alter the radiation of flux from the wafer that is heated to elevated temperatures by a bank of high-intensity lamps that are oriented to illuminate the upper side of the wafer through a transparent wall of the reactor. A reactant gas flowing into the chamber from above the wafer is inhibited from flowing about the underside of the wafer, thereby assuring wafers that are not contaminated on the underside.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.