Method for manufacturing a solar cell from a substrate wafer

US5494832A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Volker Lehmann · Hersbruck, DE
• Josef Willer · Riemerling, DE
• Wolfgang Hoenlein · Unterhaching, DE

Key dates

• Filing date: Mar 29, 1994
• Grant date: Feb 27, 1996
• Expiry date: Mar 29, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/977

Abstract

Through-holes are formed in a substrate wafer by electrochemical etching, so that a perforated, self-supporting layer of n-doped, monocrystalline silicon arises. An n-doped region and a p-doped region that form a pn-junction and that both adjoin a first principal face of the self-supporting layer are produced in the self-supporting layer. A contact to the n-doped region and a contact to the p-doped region are formed on the first principal face, so that the pn-junction can be interconnected as solar cell into which the light incidence can occur via a second principal face lying opposite the first.