Backside illuminated MSM device method
US5494833A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1994 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | Jul 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
Abstract
An improved Metal Semiconductor Metal (MSM) photodiode device and a fabrication process for realizing this device. The improved photodiode device employs frontside electrodes and backside illumination to avoid active area shadowing in the device. This configuration is achieved through a device fabrication sequence which involves substrate removal--and replacement at the device's opposed frontside surface using such media as an epoxy adhesive. The disclosed device uses gallium arsenide semiconductor materials that are lattice determined by an indium phosphide sacrificial initial substrate, in order to select a desired input energy spectral range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.