Eric A. Martin
14Patents
8h-index
16Co-inventors
69Inventor score
Filing activity: Nov 6, 1985 → Oct 23, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5608255A | FET optical receiver using backside illumination, indium materials species | Emerging Cross-Sectional Technologies | 41 | Expired |
| US5472914A | Wafer joined optoelectronic integrated circuits and method | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5541438A | Backside illuminated MSM device | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5532173A | FET optical receiver using backside illumination, indium materials species | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5557120A | Wafer joined optoelectronic integrated circuits | Emerging Cross-Sectional Technologies | 16 | Expired |
| US4627441A | B medical monitoring circuit | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5494833A | Backside illuminated MSM device method | Emerging Cross-Sectional Technologies | 11 | Expired |
| US8196865B2 | Foldable step for a vehicle, and a vehicle provided with such a step unit | Performing Operations; Transporting | 8 | Active |
| US5187110A | Field effect transistor-bipolar transistor darlington pair | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5652435A | Vertical structure schottky diode optical detector | Electricity | 6 | Expired |
| US5639673A | Transparent ohmic contacts for Schottky diode optical detectors on thin and inverted epitaxial layers | Electricity | 4 | Expired |
| US5086282A | Field effect transistor-bipolar transistor Darlington pair | Electricity | 4 | Expired |
| US10883921B2 | Complementary safety systems for laser induced breakdown spectroscopy | Physics | 1 | Active |
| US12350232B2 | Self centering vial holder for immersion probes | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.