Two step annealing process for decreasing contact resistance
US5494860A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1995 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | Mar 14, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for decreasing the electrical resistance of a circuit element containing titanium metal, in applications requiring annealing in hydrogen, is disclosed. The process requires, prior to exposure to hydrogen, heating the titanium-containing circuit element in an inert, hydrogen-free atmosphere. The process thus involves a first step of annealing the titanium-containing circuit element in an inert, hydrogen-free atmosphere, such as nitrogen or other inert gas, at 300.degree. C. to 400.degree. C. for 10 to 60 minutes, followed by a second step of annealing in a hydrogen-containing atmosphere, such as hydrogen gas or forming gas, at 350.degree. C. to 450.degree. C. for at least 20 minutes. The resulting structures have both low resistance and tight variability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.