Insulated-gate semiconductor field effect transistor which operates with a low gate voltage and high drain and source voltages
US5495122A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 19, 1994 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | May 19, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
In a low voltage drive circuit section of a semiconductor integrated circuit, the gate oxide films are approximately 250 .ANG., and a low voltage N-channel IGFET and a low voltage P-channel IGFET are operable at high speed and driven at a low voltage. In a high voltage driven circuit section, the gate oxide films are approximately 1500 .ANG., and a high voltage N-channel IGFET and a high voltage P-channel IGFET are designed to have a high breakdown voltage performance. In a low gate voltage/high voltage drive circuit section, the gate oxide films are approximately 250 .ANG., and a high voltage N-channel IGFET is driven at a low gate voltage and operable at high speed. The high voltage N-channel IGFET of the low gate voltage/high voltage drive circuit section has an offset structure including a drain diffusion layer of low concentration, such that the breakdown voltage of the drain is greatly increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.