Method of manufacturing film carrier type substrate
US5496772A · kind A · utility
2Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1992 |
| Grant date | Mar 5, 1996 |
| Priority date | — |
| Expiry date | Jun 4, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/2063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A film carrier type substrate includes a film made of organic high molecular substance, a metal layer formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.