GaAs MIS device
US5497024A · kind A · utility
5Cited by
3References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 5, 1994 |
| Grant date | Mar 5, 1996 |
| Priority date | — |
| Expiry date | Apr 5, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A combination of a semiconductor region essentially consisting of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1), an insulating film formed on the surface of the semiconductor region and essentially consisting of GaAs.sub.x P.sub.y O.sub.z (w, y, z>0), and a passivation film formed on the insulating film and made of an insulating material different from the insulating film. The laminated insulating film has an extremely low leakage current. An excellent MISFET can be realized by forming a gate electrode on the surface of the laminated insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.