Patent · US Expired

Semiconductor integrated circuit device fabrication method and its fabrication apparatus

US5497331A · kind A · utility

30Cited by
3References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 8, 1994
Grant dateMar 5, 1996
Priority date
Expiry dateJun 8, 2014

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S706/904
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor integrated circuit device fabrication technique improves the accuracy of element qualities by considering the influence of interaction of element quality parameters in the quality control of semiconductor fabrication processes and also by improving the product yield estimation accuracy so that the production efficiency can be improved. An initial value of a membership function is first set and then a plurality of element quality parameters and a combined quality parameter are expressed by membership functions in fuzzy control in a semiconductor fabrication apparatus for automating a fabrication method by connecting a computer with various measuring instruments and various processors by communication devices. Moreover, the combined quality parameters are fuzzy-inferred from the element quality parameters using these membership functions, inference rules are adjusted by data of the actual processes, the membership functions of the obtained element quality parameters are converted into an element quality control standard, and the semiconductor integrated circuit device fabrication processes are controlled in accordance with the standard.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.