Patent · US Expired

Arrangement for coating or etching substrates

US5498291A · kind A · utility

1Cited by
16References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 17, 1995
Grant dateMar 12, 1996
Priority date
Expiry dateMar 17, 2015

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05H1/46
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

The invention relates to an arrangement for coating or etching substrates. In this arrangement an HF substrate bias voltage is generated without contact. For this purpose plasma sources are equipped with a bias pot which is disposed at the dark space distance from a substrate carrier and acted upon by HF. Depending on the source used, the bias pot can be constructed as an independent unit or as a component part of the source connected so as to be conducting-for example as an HF magnetron. Via this coupled-in HF power the dc potential on the carrier, and consequently the ion bombardment on the substrate, can be set specifically.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.