Arrangement for coating or etching substrates
US5498291A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1995 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Mar 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to an arrangement for coating or etching substrates. In this arrangement an HF substrate bias voltage is generated without contact. For this purpose plasma sources are equipped with a bias pot which is disposed at the dark space distance from a substrate carrier and acted upon by HF. Depending on the source used, the bias pot can be constructed as an independent unit or as a component part of the source connected so as to be conducting-for example as an HF magnetron. Via this coupled-in HF power the dc potential on the carrier, and consequently the ion bombardment on the substrate, can be set specifically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.