Method for manufacturing a phase shift mask
US5498497A · kind A · utility
1Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1994 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Aug 29, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A phase shift layer is formed on a transparent glass on which a Cr pattern is formed and a phase shift layer pattern self-aligned by the Cr pattern is formed so that high resolution is obtained by minimized the overlapping error and the reliability of the semiconductor device is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.