Hung-Eil Kim
26Patents
9h-index
25Co-inventors
71Inventor score
Filing activity: Aug 29, 1994 → Mar 25, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7207017B1 | Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results | Physics | 60 | Expired |
| US6581023B1 | Accurate contact critical dimension measurement using variable threshold method | Electricity | 31 | Expired |
| US7194725B1 | System and method for design rule creation and selection | Emerging Cross-Sectional Technologies | 29 | Expired |
| US7065738B1 | Method of verifying an optical proximity correction (OPC) model | Physics | 29 | Expired |
| US5583069A | Method for making a fine annular charge storage electrode in a semiconductor device using a phase-shift mask | Emerging Cross-Sectional Technologies | 22 | Expired |
| US7313769B1 | Optimizing an integrated circuit layout by taking into consideration layout interactions as well as extra manufacturability margin | Physics | 21 | Expired |
| US6544699B1 | Method to improve accuracy of model-based optical proximity correction | Physics | 17 | Expired |
| US7269804B2 | System and method for integrated circuit device design and manufacture using optical rule checking to screen resolution enhancement techniques | Physics | 17 | Expired |
| US7422828B1 | Mask CD measurement monitor outside of the pellicle area | Electricity | 10 | Expired |
| US5897975A | Phase shift mask for formation of contact holes having micro dimension | Physics | 8 | Expired |
| US5756235A | Phase shift mask and method for fabricating the same | Physics | 8 | Expired |
| US7507661B2 | Method of forming narrowly spaced flash memory contact openings and lithography masks | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7018922B1 | Patterning for elongated VSS contact flash memory | Electricity | 4 | Expired |
| US6900124B1 | Patterning for elliptical Vss contact on flash memory | Electricity | 4 | Expired |
| US6593039B1 | Photoresist mask that combines attenuated and alternating phase shifting masks | Physics | 3 | Expired |
| US7384725B2 | System and method for fabricating contact holes | Physics | 3 | Expired |
| US7657864B2 | System and method for integrated circuit device design and manufacture using optical rule checking to screen resolution enhancement techniques | Physics | 3 | Active |
| US7368225B1 | Two mask photoresist exposure pattern for dense and isolated regions | Electricity | 3 | Expired |
| US7543256B1 | System and method for designing an integrated circuit device | Physics | 2 | Active |
| US5817437A | Method for detecting phase error of a phase shift mask | Physics | 2 | Expired |
| US6576376B1 | Tri-tone mask process for dense and isolated patterns | Physics | 2 | Expired |
| US5498497A | Method for manufacturing a phase shift mask | Physics | 1 | Expired |
| US7788609B2 | Method and apparatus for optimizing an optical proximity correction model | Physics | 1 | Active |
| US6566020B2 | Dark field trench in an alternating phase shift mask to avoid phase conflict | Physics | 1 | Expired |
| US8003545B2 | Method of forming an electronic device including forming features within a mask and a selective removal process | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.