Semiconductor laser and a method for fabricating the same
US5499260A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1994 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Jul 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An n-ZnMgSSe lower cladding layer, an n-ZnSSe light guiding layer, an undopad CdZnSe active layer, a p-ZnSSe light guiding layer, a p-ZnMgSSe upper cladding layer, and a p-ZnSe cap layer are successively formed on an n-GaAs substrate. Then, grooves and a ridge are formed in the respective p-type layers by etching. A current blocking layer formed by laminating SiO.sub.2 layers and TiO.sub.2 layers in multiple layers is formed so as to bury the grooves. On the top surface of the ridge where the current blocking layer is not formed, an upper electrode is formed. On the bottom surface of the n-GaAs substrate, a lower electrode is formed, and thus the ridge type semiconductor laser is fabricated. This semiconductor laser is capable of emitting blue light with an oscillating wavelength of around 500 nm. The current blocking layer of the lamination of the SiO.sub.2 and TiO.sub.2 layers allows effective confinement of both light and carriers and a drastic decrease in the threshold current for a laser oscillation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.