Production method of semiconductor device having a wiring layer containing gold
US5502005A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 29, 1993 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | Nov 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A production method of a semiconductor device which has a first insulator film formed directly or through at least one layer on a semiconductor substrate, a wiring film containing gold (Au) and formed on the first insulator film, a metal layer covering the surface of the wiring film, and a second insulator film formed on the metal layer to cover its surface. The metal layer is made through an absorption process or phenomenon of a metal included in the metal layer. Preferably, the metal layer is made of tungsten (W) or molybdenum (Mo) and the wiring film is made of a gold (Au) layer and at least one electroconductive layer stacked. An improved adhesion between the wiring layer and an insulator film formed thereon can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.