Kaoru Mikagi
26Patents
12h-index
13Co-inventors
74Inventor score
Filing activity: Nov 29, 1993 → Sep 23, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5595937A | Method for fabricating semiconductor device with interconnections buried in trenches | Electricity | 104 | Expired |
| US5899720A | Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction | Emerging Cross-Sectional Technologies | 52 | Expired |
| US5539256A | Semiconductor device having an interconnection of a laminate structure and a method for manufacturing the same | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6153507A | Method of fabricating semiconductor device providing effective resistance against metal layer oxidation and diffusion | Electricity | 33 | Expired |
| US6274923A | Semiconductor device and method for making the same | Electricity | 17 | Expired |
| US5502005A | Production method of semiconductor device having a wiring layer containing gold | Electricity | 16 | Expired |
| US6969915B2 | Semiconductor device, manufacturing method and apparatus for the same | Electricity | 16 | Expired |
| US6232227A | Method for making semiconductor device | Electricity | 15 | Expired |
| US6107096A | Method of fabricating a salicide-structured MOS semiconductor device having a cobalt disilicied film | Electricity | 14 | Expired |
| US7611041B2 | Semiconductor device, manufacturing method and apparatus for the same | Electricity | 13 | Active |
| US6284662A | Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation process | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6383911B2 | Semiconductor device and method for making the same | Electricity | 12 | Expired |
| US7793818B2 | Semiconductor device, manufacturing method and apparatus for the same | Electricity | 11 | Active |
| US7282432B2 | Semiconductor device, manufacturing method and apparatus for the same | Electricity | 10 | Expired |
| US6274932A | Semiconductor device having metal interconnection comprising metal silicide and four conductive layers | Electricity | 10 | Expired |
| US7170172B2 | Semiconductor device having a roughened surface | Electricity | 9 | Expired |
| US6566254B1 | Method for forming a silicide film on gate electrodes and diffusion layers of MOS transistors | Electricity | 9 | Expired |
| US5880505A | C49-structured tungsten-containing titanium salicide structure | Electricity | 8 | Expired |
| US6114765A | C49-structured tungsten-containing titanium salicide structure and method of forming the same | Electricity | 5 | Expired |
| US6413807B1 | Semiconductor device having silicide films on a gate electrode and a diffusion layer and manufacturing method thereof | Electricity | 5 | Expired |
| US5751067A | Compact semiconductor device having excellent electrical characteristics and long time reliability | Electricity | 5 | Expired |
| US7560372B2 | Process for making a semiconductor device having a roughened surface | Electricity | 4 | Active |
| US6069045A | Method of forming C49-structure tungsten-containing titanium salicide structure | Electricity | 3 | Expired |
| US6569766B1 | Method for forming a silicide of metal with a high melting point in a semiconductor device | Electricity | 2 | Expired |
| US6548421B1 | Method for forming a refractory-metal-silicide layer in a semiconductor device | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.