Silicon controlled rectifier and method for forming the same
US5502317A · kind A · utility
29Cited by
15References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 25, 1994 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | Oct 25, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A semiconductor controlled rectifier is disclosed herein. In a preferred embodiment, a first n-doped region 112 is formed in a p-doped semiconductor layer 126. A first n-well region 122 is formed within the first doped region 112. This well 122 extends through the region 112 and into the layer 126. A second n-doped region 114 is also formed in the layer 126. The second region 1114 is spaced from the first region 112. A second n-well 142 is formed in the layer 126 such that it partially overlaps the second region 114. A n-doped region 144 and a p-doped region 146 are each formed in the second n-well 142 and abut one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.