Charvaka Duvvury
75Patents
21h-index
51Co-inventors
91Inventor score
Filing activity: Aug 2, 1984 → Oct 10, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4855620A | Output buffer with improved ESD protection | Electricity | 73 | Expired |
| US4896243A | Efficient ESD input protection scheme | Electricity | 56 | Expired |
| US6064249A | Lateral DMOS design for ESD protection | Electricity | 46 | Expired |
| US5940258A | Semiconductor ESD protection circuit | Electricity | 43 | Expired |
| US5907462A | Gate coupled SCR for ESD protection circuits | Electricity | 42 | Expired |
| US6040968A | EOS/ESD protection for high density integrated circuits | Electricity | 40 | Expired |
| US6690066B1 | Minimization and linearization of ESD parasitic capacitance in integrated circuits | Electricity | 36 | Expired |
| US6125021A | Semiconductor ESD protection circuit | Electricity | 34 | Expired |
| US5343433A | CMOS sense amplifier | Physics | 31 | Expired |
| US5369041A | Method for forming a silicon controlled rectifier | Electricity | 29 | Expired |
| US6071768A | Method of making an efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection | Electricity | 29 | Expired |
| US5127739A | CMOS sense amplifier with bit line isolation | Physics | 29 | Expired |
| US6858902B1 | Efficient ESD protection with application for low capacitance I/O pads | Electricity | 29 | Expired |
| US5502317A | Silicon controlled rectifier and method for forming the same | Electricity | 29 | Expired |
| US5903032A | Power device integration for built-in ESD robustness | Electricity | 27 | Expired |
| US5450267A | ESD/EOS protection circuits for integrated circuits | Electricity | 26 | Expired |
| US6624487B1 | Drain-extended MOS ESD protection structure | Electricity | 26 | Expired |
| US5404041A | Source contact placement for efficient ESD/EOS protection in grounded substrate MOS integrated circuit | Electricity | 26 | Expired |
| US6137338A | Low resistance input protection circuit | Electricity | 25 | Expired |
| US5982217A | PNP driven NMOS ESD protection circuit | Electricity | 24 | Expired |
| US5468667A | Method of placing source contacts for efficient ESD/EOS protection in grounded substrate MOS integrated circuit | Electricity | 22 | Expired |
| US5814865A | Bimodal ESD protection for DRAM power supplies and SCRs for DRAMs and logic circuits | Electricity | 21 | Expired |
| US5493133A | PNP punchthrough-assisted protection device for special applications in CMOS technologies | Electricity | 21 | Expired |
| US4627033A | Sense amplifier with reduced instantaneous power | Physics | 20 | Expired |
| US5796638A | Methods, apparatus and computer program products for synthesizing integrated circuits with electrostatic discharge capability and connecting ground rules faults therein | Electricity | 20 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.