Transistor having a nonuniform doping channel
US5502322A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1994 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | Sep 21, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
A MOSFET having a nonuniform doping channel and a method for fabricating the same. The MOS transistor having a nonuniform doping channel is comprised of: a gate oxide film formed on a semiconductor substrate provided with a trench; a gate electrode of some size formed on the gate oxide film atop the trench and its surroundings, the gate electrode having a portion longer than any other portion and thus, being asymmetrical with regard to the axis passing the center of the trench; a source region formed in a predetermined portion of the semiconductor substrate neighboring a short portion of the gate electrode; a high density channel region formed by doping impurities having the same type with the semiconductor substrate in a predetermined portion of the semiconductor substrate below a longer portion of the gate electrode; and a drain region formed in a predetermined portion of the semiconductor substrate neighboring the high density channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.