Surface treatment method and surface treatment apparatus
US5503901A · kind A · utility
25Cited by
1References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1994 |
| Grant date | Apr 2, 1996 |
| Priority date | — |
| Expiry date | Jun 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3346
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Etching selectivity is improved in a semiconductor process using a fluorocarbon gas. An energy incident to a substrate is controlled to have a value to cause transition from etching to deposition on a silicon nitride film, ions having (CF.sub.2).sub.n.sup.+ as a major component are guided onto the substrate to perform selective etching of a silicon oxide film against the silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.