Power MOSFET in silicon carbide
US5506421A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 24, 1992 |
| Grant date | Apr 9, 1996 |
| Priority date | — |
| Expiry date | Nov 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
The power metal oxide semiconductor field effect transistor (MOSFET) has a drain region, a channel region, and a source region formed of silicon carbide. The drain region has a substrate of silicon carbide of a first conductivity type and a drain-drift region of silicon carbide adjacent the substrate having the same conductivity type. The channel region is adjacent the drain-drift region and has the opposite conductivity type from the drain-drift region. The source region is adjacent the channel region and has the same conductivity type as the drain-drift region. The MOSFET also has a gate region having a gate electrode formed on a first portion of the source region, a first portion of the channel region, and a first portion of the drain region. A source electrode is formed on a second portion of the source region and a second portion of the channel region. Also, a drain electrode is formed on a second portion of the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.