Semiconductor device with improved electromigration resistance and method for making the same
US5506450A · kind A · utility
33Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 1995 |
| Grant date | Apr 9, 1996 |
| Priority date | — |
| Expiry date | May 4, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having improved electromigration resistance in their connections through dielectric layers are described. Where a conductive metal line overlies a dielectric layer and makes contact to a lower conductive structure through the dielectric layer by virtue of a conductive member, such as a tungsten plug or metal contact, the conductive metal line is provided with an end portion not otherwise connected to a conductive structure. The end portion serves as a reservoir of extra conductive material supplying the conductive metal line as the line is depleted through stress migration and/or electromigration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.