SOI DRAM with field-shield isolation and body contact

US5508219A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Gary B. Bronner · Stormville, US
• John K. DeBrosse · Colchester, US
• Jack A. Mandelman · Stormville, US

Key dates

• Filing date: Jun 5, 1995
• Grant date: Apr 16, 1996
• Expiry date: Jun 5, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

An SOI deep-trench DRAM having body contacts and field shield isolation makes contact between the SOI device layer and the field shield layer at selected sites between adjacent deep trench capacitors. The field shield layer is biased negative to provide better isolation and to set the body potential of the array transistors.