Inventor · Stormville, NY, US

Gary B. Bronner

128Patents
27h-index
112Co-inventors
93Inventor score

Filing activity: Nov 2, 1990 → Feb 27, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6566177B1 Silicon-on-insulator vertical array device trench capacitor DRAM Electricity 181 Expired
US5606188A Fabrication process and structure for a contacted-body silicon-on-insulator dynamic random access memory Electricity 162 Expired
US7470570B2 Process for fabrication of FinFETs Electricity 132 Active
US5508219A SOI DRAM with field-shield isolation and body contact Electricity 96 Expired
US6087225A Method for dual gate oxide dual workfunction CMOS Electricity 71 Expired
US5360758A Self-aligned buried strap for trench type DRAM cells Electricity 70 Expired
US5945707A DRAM cell with grooved transfer device Electricity 67 Expired
US6767789B1 Method for interconnection between transfer devices and storage capacitors in memory cells and device formed thereby Electricity 66 Expired
US5876788A High dielectric TiO.sub.2 -SiN composite films for memory applications Electricity 64 Expired
US5792703A Self-aligned contact wiring process for SI devices Electricity 63 Expired
US5362663A Method of forming double well substrate plate trench DRAM cell array Electricity 57 Expired
US6388294B1 Integrated circuit using damascene gate structure Electricity 50 Expired
US6426252B1 Silicon-on-insulator vertical array DRAM cell with self-aligned buried strap Electricity 49 Expired
US6242770A Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the same Performing Operations; Transporting 46 Expired
US6140208A Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications Electricity 45 Expired
US5128271A High performance vertical bipolar transistor structure via self-aligning processing techniques Emerging Cross-Sectional Technologies 43 Expired
US6194301A Method of fabricating an integrated circuit of logic and memory using damascene gate structure Electricity 42 Expired
US6037194A Method for making a DRAM cell with grooved transfer device Electricity 41 Expired
US5766971A Oxide strip that improves planarity Emerging Cross-Sectional Technologies 41 Expired
US5525531A SOI DRAM with field-shield isolation Electricity 41 Expired
US5250829A Double well substrate plate trench DRAM cell array Electricity 37 Expired
US5253202A Word line driver circuit for dynamic random access memories Physics 34 Expired
US6281064A Method for providing dual work function doping and protective insulating cap Electricity 33 Expired
US8344475B2 Integrated circuit heating to effect in-situ annealing Electricity 32 Active
US6573137B1 Single sided buried strap Electricity 31 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.