Patent · US Expired

Process for producing a pressure transducer using silicon-on-insulator technology

US5510276A · kind A · utility

64Cited by

10References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Bernard Diem · Échirolles, FR
Marie-Therese Delaye · Grenoble, FR

Key dates

Filing date	Dec 15, 1993
Grant date	Apr 23, 1996
Priority date	—
Expiry date	Dec 15, 2013

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/159
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A process for producing a pressure transducer or sensor using the silicon-on-insulator method is provided. The process includes the following steps: (a) producing a monocrystalline silicon film (44) on a silicon substrate (6) at least locally separated from the latter by an insulating layer (42), (b) producing an opening (24) in the silicon film down to the insulating layer, (c) partially eliminating the insulating layer via the opening in order to form the diaphragm in the silicon film, and (d) resealing the opening (26).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.