Method for forming a pattern and forming a thin film used in pattern formation
US5512328A · kind A · utility
196Cited by
25References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1993 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Jul 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/939
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.