Method of making symmetrical and asymmetrical MESFETS
US5512499A · kind A · utility
7Cited by
15References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1993 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Mar 15, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A method of fabricating a MESFET is comprised of providing a semiconductor material having a channel region formed therein, forming a gate on the semiconductor material over the channel region, forming a spacer adjacent a first portion of the gate disposed on the semiconductor material, and forming a hard mask disposed on a second portion of the gate and on a portion of the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.