Gregory L. Hansell
10Patents
7h-index
12Co-inventors
59Inventor score
Filing activity: Nov 8, 1983 → Dec 13, 1995
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4666252A | High yield liquid crystal display and method of making same | Emerging Cross-Sectional Technologies | 87 | Expired |
| US4589733A | Displays and subassemblies having improved pixel electrodes | Physics | 32 | Expired |
| US4633284A | Thin film transistor having an annealed gate oxide and method of making same | Electricity | 27 | Expired |
| US4547789A | High current thin film transistor | Electricity | 22 | Expired |
| US4929569A | Method of fabricating amorphous silican diode addressed liquid crystal display | Physics | 12 | Expired |
| US5061040A | Liquid crystal displays operated by amorphous silicon alloy diodes | Physics | 8 | Expired |
| US5512499A | Method of making symmetrical and asymmetrical MESFETS | Electricity | 7 | Expired |
| US6057219A | Method of forming an ohmic contact to a III-V semiconductor material | Electricity | 7 | Expired |
| US5389564A | Method of forming a GaAs FET having etched ohmic contacts | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5583355A | Self-aligned FET having etched ohmic contacts | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.