Method of forming a silicon insulating layer in a semiconductor device
US5512519A · kind A · utility
49Cited by
2References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1995 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Jan 23, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of forming an insulating layer of a semiconductor device, in which an oxide layer having an optimum nitrogen concentration and also a sufficient thickness may be grown by independently regulating the flow rate of NO and O.sub.2 gas and supplying the NO and O.sub.2 gas to a reaction chamber. This method is such that the NO and O.sub.2 gas is supplied to the chamber by regulating the NO and O.sub.2 gas, while maintaining the inside of the chamber at a temperature of about 750.degree. C. to 1050.degree. C. for a predetermined time, wherein nitrogen is included in a Si/SiO.sub.2 interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.