Capacitor for use in DRAM cell using surface oxidized silicon nodules
US5512768A · kind A · utility
12Cited by
20References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1994 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Mar 18, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A MOST capacitor structure in accordance with the invention is formed by using surface oxidized silicon nodules after metal etching to define polysilicon pillars with annular cross sections and with diameters of 0.05 to 0.2 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.